Low-temperature dephasing in disordered conductors: experimental aspects

نویسنده

  • M. E. Gershenson
چکیده

Abstract. What is the lowest temperature to which one can trace the growth of the dephasing time τφ in low-dimensional conductors? I consider the fundamental limitation, the crossover from weak to strong localization, as well as several experimental reasons for frequently observed saturation of τφ (hot-electron effects, dephasing by external noise). Recent progress in our understanding of the electron-phonon interaction in disordered conductors is also briefly discussed.

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تاریخ انتشار 1999